徳田 安紀   Yasunori TOKUDA

講座・コース 情報電子工学講座 Yasunori TOKUDA
役職 教授
生年月 非公開
自室番号 2309
Email tokuda**c.oka-pu.ac.jp
※利用の際は,** を @に置き換えてください.
学歴 大阪大学 工学部 応用物理学科(1979年3月)
大阪大学大学院 工学研究科 応用物理学専攻 博士前期課程修了(1981年3月)
学位 工学博士(大阪大学 第8486,1989年3月)
「超格子および量子井戸構造の利用による半導体レーザの高性能化と新機能化に関する研究」
資格・免許 エックス線作業主任者(1982年8月),危険物取扱者(乙種第4類)(1985年1月),特定化学物質等作業主任者(1987年3月),有機溶剤作業主任者(1991年5月)
着任年月 2010年01月
職歴 三菱電機株式会社(1981年4月~2009年12月)
 1981年 4月 中央研究所に配属
 1995年10月 半導体基礎研究所 メモリデバイスグループマネージャ
 1996年 4月 先端技術総合研究所 微細デバイス技術グループマネージャ
 2000年10月 本社 開発本部
 2005年 4月 先端技術総合研究所 アドバンストデバイス技術部長
専門分野 量子エレクトロニクス,光エレクトロニクス,半導体,固体物理
所属学協会 応用物理学会
現在の研究テーマ 新しい物理現象の探索と新機能デバイスの創出
主要担当科目
 学部 光エレクトロニクス, 計測工学, 電子回路
 大学院 半導体デバイス特論, 量子効果デバイス論
相談・共同研究可能
なテーマ
半導体デバイス(受発光デバイス,高速電子デバイス),固体物理(光物性,半導体)
研究概要 【1】超格子ならびに量子井戸構造の利用による半導体レーザの高性能化と新機能化
◆超格子光ガイド層を用いたレーザダイオード
・Y. Tokuda et al., “Application of AlAs-GaAs superlattice to step-index and graded-index waveguide separate-confinement heterostructure laser diodes,” J. Appl. Phys. 60, 2729 (1986).
・Y. Tokuda et al., “Separate confinement heterostructure laser diodes with all-binary AlAs/GaAs short-period-superlattice optical confinement layers,” Inst. Phys. Conf. Ser. 79, 697 (1986).
◆高次量子準位間でのレーザ発振現象とその応用
・Y. Tokuda et al., “Widely separated wavelength switching of single quantum well laser diode by injection-current control,” Appl. Phys. Lett. 49, 1629 (1986).
・Y. Tokuda et al., “Carrier-temperature and wavelength-switching in GaAs single-quantum-well laser diode,” Jpn. J. Appl. Phys. 25, L931 (1986).
・Y. Tokuda et al., “Lasing wavelength of an asymmetric double quantum well laser diode,” Appl. Phys. Lett. 51, 209 (1987).
・Y. Tokuda et al., “Dual-wavelength emission from a twin-stripe single quantum well laser,” Appl. Phys. Lett. 51, 1664 (1987).
・Y. Tokuda et al., “Emission spectra of single quantum well lasers with inhomogeneous current injection,” J. Appl. Phys. 64, 1022 (1988).

【2】量子井戸における電界吸収効果およびトンネル効果の利用による新機能光制御素子の創出
◆自己電気光学効果による多彩な光多重安定特性の取得とその応用
・Y. Tokuda et al., “Self-deformed and hysteretic photocurrent spectra of quantum wells with a load resister,” Appl. Phys. Lett. 54, 2324 (1989).
・Y. Tokuda et al., “Incident wavelength dependence of photocurrent bistability by external bias voltage control in a quantum well p-i-n diode,” Appl. Phys. Lett. 55, 711 (1989).
・Y. Tokuda et al., “Dual-wavelength multiple quantum well n-i-p-i-n photodetector using an optically bistable abrupt absorption edge,” Appl. Phys. Lett. 56, 277 (1990).
・Y. Tokuda et al., “Complex multistable response of serially connected optical bistable devices,” Appl. Phys. Lett. 59, 1016 (1991).
・Y. Abe and Y. Tokuda, “Optical nonlinear responses of a quantum well photodiode with a non-ohmic contact,” Appl. Phys. Lett. 60, 1664 (1992).
・Y. Tokuda et al., “Optically reversible switching between binary states using multistable loops,” Appl. Phys. Lett. 63, 2609 (1993).
・Y. Abe and Y. Tokuda, “Significant effect of lateral resistivity on optical nonlinear responses of a quantum well p-i-n photodiode,” Appl. Phys. Lett. 63, 3259 (1993).
◆結合量子井戸構造の電界吸収特性とその応用
・Y. Tokuda et al., “Distinct observation of interwell coupling effect on optical transitions in double quantum wells in an electric field,” Appl. Phys. Lett. 54, 1232 (1989).
・Y. Tokuda et al., “Anomalous excitation-intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure,” J. Appl. Phys. 65, 2168 (1989). 
・Y. Tokuda et al., “Photoluminescence of a novel hetero n-i-p-i structure incorporating triple quantum wells,” Jpn. J. Appl. Phys. 28, L747 (1989).
・Y. Tokuda et al., “Self-electro-optic effect based on anticrossing of excitonic transitions in a coupled quantum well structure,” Appl. Phys. Lett. 56, 166 (1990).
・Y. Tokuda et al., “Novel spectral response of a coupled quantum well photodiode,” Appl. Phys. Lett. 56, 2166 (1990).
・Y. Tokuda et al., “Observation of excitonic effects on electroabsorption in coupled quantum wells,” Phys. Rev. B41, 10280 (1990).
・Y. Tokuda et al., “Triple excitonic mixing associated with recoupling of a Stark-localized state in coupled quantum wells confined by superlattices,” Phys. Rev. B43, 7170 (1991).
・Y. Tokuda and Y. Abe, “Optical bistable responses based on self-electro-optic effect in a nonbiased asymmetric coupled quantum well p-i-n photodiode,” Appl. Phys. Lett. 62, 2492 (1993).
・Y. Abe and Y. Tokuda, “All-optical bistability of a p-i-p-i-n device with GaAs/AlAs coupled-quantum-well absorption layers and AlAs resistive layer,” Opt. Lett. 18, 885 (1993).
・Y. Tokuda et al., “External bias voltage and incident light intensity dependence effects of quantum-confined excitonic transitions on bulk background photocurrent spectra,” J. Appl. Phys. 75, 1620 (1994).

【3】ギガビットスケールLSI対応微細トランジスタおよび素子分離技術の開発
◆Si選択結晶成長を用いた微細MOSトランジスタ
・S. Yamakawa et al., “Drivability improvement on deep-submicron MOSFET's by elevation of source/drain regions,” IEEE Electron Device Lett. EDL-20, 366 (1999).
・Y. Abe et al., “Simulation study on comparison between metal gate and polysilicon gate for sub-quarter-micron MOSFET's,” IEEE Electron Device Lett. EDL-20, 632 (1999).
・K. Sugihara et al., “Parasitic resistance reduction in deep submicron dual-gate transistors with partially elevated source/drain extension regions fabricated by complementary metal-oxide-semiconductor technologies,” Jpn. J. Appl. Phys. 39, 387 (2000).
・S. Maruno et al., “Selective epitaxial growth by ultrahigh-vacuum chemical vapor deposition with alternating gas supply of Si2H6 and Cl2,” Jpn. J. Appl. Phys. 39, 6139 (2000).
・K. Sugihara et al. “Short channel characteristics of quasi-single-drain MOSFETs,” IEEE Electron Device Lett. EDL-22, 351 (2001).
・N. Miura et al., “Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs,” IEEE Trans. Electron Devices ED-48, 1969 (2001).
・T. Furukawa et al., “Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 40, L1051 (2001).
・T. Nakahata et al., “Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth,” J. Crystal Growth 226, 443 (2001).
◆微細シャロートレンチ分離技術
・K. Shiozawa et al., “Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process,” Jpn. J. Appl. Phys. 35, L1625 (1996).
・T. Oishi et al., “Narrow-channel metal oxide semiconductor field effect transistor isolated by an ultra-fine trench,” Jpn. J. Appl. Phys. 36, L547 (1997).
・T. Oishi et al., “Protection of field oxide in trench isolation against contact hole etching to improve alignment tolerance,” Jpn. J. Appl. Phys. 37, L833 (1998).
・T. Oishi et al., “Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors,” Jpn. J. Appl. Phys. 37, L852 (1998).
・K. Shiozawa et al., “Excellent electrical characteristics of ultrafine trench isolation,” J. Electrochem. Soc. 145, 1687 (1998).
・K. Shiozawa et al., “Advantage of shallow trench isolation over local oxidation of silicon on alignment tolerance,” Jpn. J. Appl. Phys. 38, L234 (1999).
・K. Shiozawa et al., “Expansion of effective channel width for MOSFETs defined by novel T-shaped shallow trench isolation fabricated with SiON spacers and liners,” Electron. Lett. 36, 910 (2000).
・T. Oishi et al., “Isolation edge effect depending on gate length of MOSFET's with various isolation structures,” IEEE Trans. Electron Devices ED-47, 822 (2000).
・K. Shiozawa et al., “Remarkable effects of introduction of SiON materials into shallow trench isolation fabrication process on metal-oxide-semiconductor field-effect-transistors,” Jpn. J. Appl. Phys. 40, 462 (2001).

【4】時分割ならびに波長分割多重光通信用半導体レーザの開発
◆分布帰還型自己パルス発振レーザ
・S. Nishikawa et al., “Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes,” Appl. Phys. Lett. 85, 4840 (2004).
・S. Nishikawa et al., “Very high frequency self-pulsation and stable optical injection locking for well-defined multi-electrode distributed feedback lasers,” Jpn. J. Appl. Phys. 43, 1965 (2004).
・S. Nishikawa et al., “Coupling coefficient dependence on oscillation frequency stability of self-pulsating DFB laser diodes,” Electron. Lett. 41, 964 (2005).
・S. Nishikawa at al., “All-optical clock recovery and wavelength conversion by combination of self-pulsation laser and semiconductor-optical-amplifier-based Mach-Zehnder interferometer,” Jpn. J. Appl. Phys. 45, 3457 (2006).
・S. Nishikawa et al., “Lasing mechanism analysis of self-pulsating distributed feedback laser diodes and successful demonstration of all-optical signal recovery at 40 Gbps,” Jpn. J. Appl. Phys. 47, 3493 (2008).
◆分布反射型波長可変レーザ
・M. Gotoda et al., “A widely tunable SOA-integrated DBR laser by combination of sampled and superstructure gratings,” IEEE J. Lightwave Technol. LT-23, 2331 (2005).
・S. Nishikawa et al., “Optical high-frequency pulse generation with wavelength tunability by using a DBR laser with vernier-type gratings,” IEEE Photon. Technol. Lett. PTL-17, 1608 (2005).

【5】長距離光通信用および量子暗号通信用アバランシェフォトダイオードの開発
◆10Gbps対応高性能アバランシェフォトダイオード
・E. Yagyu et al., “Simple planar structure for high-performance AlInAs avalanche photodiodes,” IEEE Photon. Technol. Lett. PTL-18, 76 (2006).
・E. Yagyu et al., “Investigation of guardring-free planar AlInAs avalanche photodiodes,” IEEE Photon. Technol. Lett. PTL-18, 1264 (2006).
・E. Yagyu et al., “Guardring-free AlInAs avalanche photodiodes for 2.5-Gb/s receivers with high sensitivity,” IEEE Photon. Technol. Lett. PTL-19, 765 (2007).
・E. Ishimura et al., “Degradation mode analysis on highly reliable guardring-free InAlAs avalanche photodiode,” IEEE J. Lightwave Technol. LT-25, 3686 (2007).
・E. Yagyu et al., “Lateral n-p-n avalanche photodiodes with an AlInAs multiplication layer,” Electron. Lett. 44(9), 591-592 (2008).
・E. Yagyu et al., “Design and characteristics of guardring-free planar AlInAs avalanche photodiodes,” IEEE J. Lightwave Technol. LT-27, 1011 (2009).
・Y. Tokuda and E. Yagyu, “Silicon Photonics: Look out III-V,” Nature Photonics 3, 7 (2009).
◆単光子検出用アバランシェフォトダイオード
・K. Sugihara et al., “Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode,” J. Appl. Phys. 99, 124502 (2006).
・E. Yagyu et al., “Planar avalanche photodiode for long-haul single-photon optic fiber communications,” Appl. Phys. Express 1, 012001 (2008).
・K. Sugihara et al., “Analysis of single-photon-detection characteristics of GaInAs/InP avalanche photodiodes,” IEEE J. Quantum Electron. QE-46, 1444 (2010).

【6】ワイドギャップ半導体高周波トランジスタの高性能化
◆GaNチャネル高移動度トランジスタの高性能化
・T. Nanjo et al., “Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics,” Appl. Phys. Lett. 88, 043503 (2006).
・M. Suita et al., “Ion implantation doping for AlGaN/GaN HEMTs,” Physica Status Solidi (c) 3, 2364 (2006).
・T. Nanjo et al., “X-ray photoelectron spectroscopy study of the origin of the improved device performance by a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high-electron-mobility transistor,” Jpn. J. Appl. Phys. 46, L584 (2007).
・M. Suita et al., “Application of a lightly doped drain structure to AlGaN/GaN HEMTs by an ion implantation technique,” Electron. Lett. 44, 1378 (2008).
・T. Nanjo et al., “Drivability enhancement for AlGaN/GaN high-electron mobility transistors with AlN spacer layer using Si ion implantation doping,” Appl. Phys. Express 2, 031003 (2009).
・T. Nanjo et al., “Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts,” Jpn. J. Appl. Phys. 50, 064101 (2011).
◆AlGaNチャネル高移動度トランジスタの動作実証
・T. Nanjo et al., “First operation of AlGaN channel high electron mobility transistors,” Appl. Phys. Express 1, 011101 (2008).
・T. Nanjo et al., “Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors,” Appl. Phys. Lett. 92, 263502 (2008).
・T. Nanjo et al., “Comparison of the characteristics of the AlGaN channel HEMTs formed on SiC and sapphire substrates,” Electron. Lett. 45, 424 (2009).
・T. Nanjo et al., “AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current,” Electron. Lett. 45, 1346 (2009).
・T. Nanjo et al., “AlGaN channel HEMT with extremely high breakdown voltage,” IEEE Trans. Electron Devices 60, 1046 (2013).

【7】メタマテリアルおよびプラズモニクスの利用による新しいデバイス機能の創出
◆左手系媒質の作製と応用
・K. Takano et al., “Fabrication of terahertz planar metamaterials using a super-fine ink-jet printer,” Appl. Phys. Express 3, 016701 (2010).
・T. Fukushima et al., “Analysis of resonator modes in two-dimensional laser cavities containing a left-handed material,” Opt. Rev. 20, 293 (2013).
・K. Takano et al., “Crossover from capacitive to inductive electromagnetic responses in near self-complementary metallic checkerboard patterns,” Opt. Express 22, 24787 (2014).
◆積層メタルスリットアレイの光学応答特性とその応用
・K. Akiyama et al., “Optical transmission anomalies in a double-layered metallic slit array,” Opt. Express 18, 17876 (2010).
・Y. Tokuda et al., “Optical phased array functions in double-layered metallic plate systems with artificially modulated slit arrays,” Appl. Phys. Express 5, 042502 (2012).
・Y. Tokuda et al., “Remarkable transmission characteristics of optical waves through modulated double-layered metallic slit arrays,” AIP Advances 2, 042112 (2012).
・Y. Tokuda et al., “Spectrometric functions of multi-stacked metallic plates with modulated slit arrays,” Appl. Phys. Express 6, 062602 (2013).
・K. Akiyama et al., “Tuning the effective refractive index of a thin air gap region sandwiched by metallic metamaterials by lateral displacements,” J. Appl. Phys. 113, 243103 (2013).
・Y. Tokuda et al., “Investigation of fade-out mechanism of resonance modes in optical transmission using stacked metallic sub-wavelength slit arrays,” J. Appl. Phys. 115, 243104 (2014).
・Y. Tokuda et al., “Crossing behaviors of optical resonance modes in metallic metamaterials,” Appl. Phys. Express 9, 032201 (2016).
社会における活動 1. (社)日本電子工業振興協会 量子効果デバイス専門委員会委員(1989.4~1991.3)
2. (社)電気学会 量子化機能電子材料調査専門委員会委員(1990.4~1993.3)
3. (社)日本電子工業振興協会 量子化デバイス機能専門委員会委員(1991.4~2003.3)
4. (財)新機能素子研究開発協会 量子化機能素子技術動向調査研究委員会委員(1991.4~2001.3)
5. (社)応用物理学会 関西支部幹事(2000.2~2002.1)
6. (社)日本機械工業連合会 戦略的技術マネジメント調査分科会幹事(2001.4~2003.3)
7. (社)応用物理学会 本部代議員(2002.2~2006.1)
8. (社)電子情報技術産業協会 フォトニックネットワークデバイス調査研究委員会委員(2003.4~2004.3)
9. (財)新機能素子研究開発協会 高周波デバイスプロジェクト技術委員(2005.4~2007.3)
10. (社)電子情報技術産業協会 電子材料・デバイス技術専門委員会委員(2005.4~2008.3)
11. (独)日本学術振興会 先導的研究開発委員会委員(2009.4~2010.12)
12. (財)国立高等研究所 研究プロジェクト参加研究者(2009.4~2011.3)
受賞 第48回注目発明選定(1989.4)
研究業績 【学術原著論文】(2010年以降の本学所属での発表分)
[19] Y. Tokuda, K. Sakaguchi, K. Takano, Y. Yamaguchi, and T. Fukushima, “Crossing behaviors of optical resonance modes in metallic metamaterials,” Applied Physics Express 9, 032201 (2016).
[18] T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Light propagation in a Penrose unilluminable room,” Opt. Express 23, 17431 (2015).
[17] Y. Tokuda, K. Sakaguchi, K. Takano, T. Fukushima, and M. Hangyo, “Investigation of fade-out mechanism of resonance modes in optical transmission using stacked metallic sub-wavelength slit arrays,” Journal of Applied Physics 115, 243104 (2014).
[16] K. Takano, F. Miyamaru, K. Akiyama, H. Miyazaki, M. W. Takeda, Y. Abe, Y. Tokuda, H. Ito, and M. Hangyo, “Crossover from capacitive to inductive electromagnetic responses in near self-complementary metallic checkerboard patterns,” Optics Express 22, 24787 (2014).
[15] T. Fukushima, S. Shinohara, S. Sunada, T. Harayama, K. Aeai, K. Sakaguchi, and Y. Tokuda, “Lasing of TM modes in a two-dimensional GaAs microlaser,” Optics Express 22, 11912 (2014).
[14] T. Fukushima, S. Shinohara, S. Sunada, T. Harayama, K. Aeai, K. Sakaguchi, and Y. Tokuda, “Selective excitation of lowest-order transverse ring modes in a quasi-studium laser diode,” Optics Letters 38, 4159 (2013).
[13] K. Akiyama, K. Shibuya, K. Takano, Y. Abe, Y. Tokuda, and M. Hangyo, “Tuning the effective refractive index of a thin air gap region sandwiched by metallic metamaterials by lateral displacements,” Journal of Applied Physics 113, 243103 (2013).
[12] T. Fukushima, K. Sakaguchi, M. Hangyo, and Y. Tokuda, “Analysis of resonator modes in two-dimensional laser cavities containing a left-handed material,” Optical Review 20, 293 (2013).
[11] Y. Tokuda, K. Sakaguchi, T. Nishihara, K. Takano, T. Fukushima, and M. Hangyo, “Spectrometric functions of multi-stacked metallic plates with modulated slit arrays,” Applied Physics Express 6, 062602 (2013).
[10] T. Nanjo, A. Imai, Y. Suzuki, Y. Abe, T. Oishi, M. Suita, E. Yagyu, A. Shima, and Y. Tokuda, “AlGaN channel HEMT with extremely high breakdown voltage,” IEEE Transactions on Electron Devices 60, 1046 (2013).
[9] Y. Tokuda, K. Sakaguchi, K. Takano, T. Fukushima, and M. Hangyo, “Remarkable transmission characteristics of optical waves through modulated double-layered metallic slit arrays,” AIP Advances 2, 042112 (2012).
[8] T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Quality factor of circular laser diode beam tailored by optical interference,” Optical Review 19, 328 (2012).
[7] T. Fukushima, S. Sunada, T. Harayama, K. Sakaguchi, and Y. Tokuda, “Lowest order axial and ring mode lasing in confocal quasi-stadium laser diodes,” Applied Optics 51, 2515 (2012).
[6] Y. Tokuda, H. Takaiwa, K. Sakaguchi, Y. Yakiyama, K. Takano, K. Akiyama, T. Fukushima, and M. Hangyo, “Optical phased array functions in double-layered metallic plate systems with artificially modulated slit arrays,” Applied Physics Express 5, 042502 (2012).
[5] T. Nanjo, T. Motoya, A. Imai, Y. Suzuki, K. Shiozawa, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts,” Japanese Journal of Applied Physics 50, 064101 (2011).
[4] T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Laser diode beam shaping by optical interference,” Optical Review 18, 287 (2011).
[3] K. Sugihara, E. Yagyu, T. Nishioka, K. Yoshiara, M. Matsui, Y. Tokuda, and K. Itoh, “Analysis of single-photon-detection characteristics of GaInAs/InP avalanche photodiodes,” IEEE Journal of Quantum Electronics QE-46, 1444 (2010).
[2] K. Takano, T. Kawabata, Cho-Fan Hsieh, K. Akiyama, F. Miyamaru, Y. Abe, Y. Tokuda, Ru-Pin Pan, Ci-L. Pan, and M. Hangyo, “Fabrication of terahertz planar metamaterials using a super-fine ink-jet printer,” Applied Physics Express 3, 016701 (2010).
[1] K. Akiyama, K. Takano, Y. Abe, Y. Tokuda, and M. Hangyo, “Optical transmission anomalies in a double-layered metallic slit array,” Optics Express 18, 17876 (2010).
最終更新日 2016.05.24